Response times of a degenerately doped semiconductor based plasmonic modulator

We present a transient response study of semiconductor based plasmonic switch. The proposed device operates through active control and modulation localized electron density waves, i.e., surface plasmon polaritons (SPPs) at degenerately doped In 0.53 Ga 0.47 As PN ++ junctions. A set devices is designed fabricated, its optical electronic behaviors are studied both experimentally theoretically. Optical characterization shows far-field reflectivity modulation, result electrical tuning the SPPs junctions for mid-IR wavelengths, with significant 3 dB bandwidths. Numerical studies using self-consistent electro-optic multi-physics model performed to uncover temporal devices’ electromagnetic kinetic mechanisms facilitating SPP switching simulations show strong synergy experimental results, validating claim potential optoelectronic bandwidth as high 2 GHz. Thus, this confirms that presented diode architecture can be implemented high-speed means, providing pathway toward fast all-semiconductor devices.